型号:

BD676G

RoHS:无铅 / 符合
制造商:ON Semiconductor描述:TRANS DARL PNP 45V 4A BIPO TO225
详细参数
数值
产品分类 分离式半导体产品 >> 晶体管(BJT) - 单路
BD676G PDF
标准包装 500
系列 -
晶体管类型 PNP - 达林顿
电流 - 集电极 (Ic)(最大) 4A
电压 - 集电极发射极击穿(最大) 45V
Ib、Ic条件下的Vce饱和度(最大) 2.5V @ 30mA,1.5A
电流 - 集电极截止(最大) 500µA
在某 Ic、Vce 时的最小直流电流增益 (hFE) 750 @ 1.5A,3V
功率 - 最大 40W
频率 - 转换 -
安装类型 通孔
封装/外壳 TO-225AA,TO-126-3
供应商设备封装 TO225AA
包装 散装
其它名称 BD676G-ND
BD676GOS
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